Ibintu byo gushyushya bya Silicon Carbide: Uburyo bwo gushyira mu byiciro imiterere n'ubushobozi bwo guhindura

Ibintu bishyushya bya silicon carbide (SiC)ni ingenzi mu nganda zikoresha ubushyuhe bwinshi, zifite agaciro ko kuba zituje cyane, zikoresha ingufu neza, kandi zigahoraho. Imiterere yazo igira ingaruka ku buryo butaziguye ku bijyanye n'imiterere y'itanura n'ibisabwa mu gushyushya. Uretse imiterere isanzwe, guhindura ibintu mu buryo bwihariye bituma habaho guhuza neza n'ibikoresho byihariye by'inganda. Iyi ngingo igaragaza imiterere y'ingenzi n'ubushobozi bwo guhindura ibintu mu buryo bworoshye kugira ngo bigufashe guhitamo igisubizo cyiza cyo gushyushya mu bushyuhe bwinshi.

Imiterere y'ingenzi y'ibikoresho byo gushyushya bya Silicon Carbide
Ibintu bishyushya bya SiC bikorwa mu buryo butandukanye busanzwe, buri kimwe cyagenewe imikorere yihariye:
1. Inkoni za SiC zifite imigozi:Ubwoko bukoreshwa cyane, bufite imigozi yo gushyiramo neza. Igishushanyo mbonera cy’umurongo ugororotse gitanga ubushyuhe bumwe, bukwiriye amatanura yo mu miyoboro, amatanura yo mu miyoboro, n’amatanura yo gutunganya ubushyuhe. Ingano y’umurambararo: mm 12–60, uburebure bukoreshwa kugeza kuri mm 1800, ubushyuhe ntarengwa bwo gukoresha ni 1625℃.
2. Ibintu bya SiC bifite ishusho ya U:Igondaguritse muri U-configuration kugira ngo izigame umwanya wo kuyishyiramo kandi yongere imikorere myiza y'imirasire. Ikunze gushyirwa mu itanura rihagaze, mu mashyiga afunguye, no mu mashyiga ya laboratwari. Umurambararo w'umurambararo: mm 50–200, ushobora guhuza n'ibipimo bitandukanye by'imbere mu cyumba.
3. Ibintu bya SiC bifite ishusho ya W:Ifite ishusho ya W ifite imiterere itatu, itanga ubuso bunini bwo gushyushya kugira ngo ishyuhe vuba kandi igire ubushyuhe bwinshi. Ikoreshwa mu matanura manini arimo amatanura ashongesha ibirahure n'amatanura ashyushya muri ceramic. Uburebure rusange bugera kuri mm 3000 kugira ngo ubushyuhe bw'icyumba bube buhoraho.
4. Inkoni za SiC zo mu bwoko bw'imbunda:Yakozwe ifite ishusho nk'iy'imbunda n'igice kirekire gishyushye cyo gushyushya ahantu hamwe, nko gutunganya ubushyuhe bw'igice cy'ibikoresho by'icyuma no gushyushya ahantu mu itanura rito. Igabanya ubushyuhe, hamwe n'ubushyuhe ntarengwa bwo gukora bwa 1600℃.
5. Ibintu bya SiC by'ubwoko bw'urugi:Yakozwe mu nyubako y’umuryango, itanga ahantu hagari kandi hashyushya neza. Ikwiriye cyane amatanura yo mu gikoni n’amatanura yo mu mwobo, ifite uburyo bworoshye bwo kuyishyiraho nta bikoresho bigoye, ikoreshwa cyane mu gusya ibice by’ikoranabuhanga.
6. Inkoni za SiC zo mu nguni y'iburyo:Yubatswe ifite uburebure bwa 90° ku myanya ifunze n'imiterere y'inkuta, nk'ibyumba bifite imiterere n'uduce tw'imfuruka mu itanura rito ry'igerageza. Guteranya ibikoresho bihujwe bitanga ubushobozi bwo kugumana imiterere, hamwe n'umurambararo wa mm 10–40.
7. Inkoni za SiC zo mu mpera zikomeye:Ifite impande nini zikonje kandi zifite ubushobozi bwo kudakoresha ubushyuhe bwinshi, ikarinda amashanyarazi kwangirika cyane. Ni nziza cyane ku mashyiga ashyushye cyane amara igihe kirekire harimo amashyiga ya keramike n'amashyiga akoresha ibirahure, kandi amara igihe kirekire kurusha 20% ugereranije n'andi asanzwe.
8. Ingano za SiC zifite umurambararo umwe:Ifite umurambararo uhoraho mu burebure bwose, itanga ubushyuhe buhamye. Irakundwa mu gukoresha neza harimo ubushyuhe bwa laboratwari n'ibikoresho bya semiconductor. Ihangana ry'umurambararo rigenzurwa kuri ± 0.2 mm kugira ngo ihuze neza.